Recent advances in AlSb/InAs HEMTs for high-speed electronics

被引：0

作者：

Boos, JB ^{[1
]}

Bennett, BR ^{[1
]}

Ancona, MG ^{[1
]}

Kruppa, W ^{[1
]}

Park, D ^{[1
]}

Yang, MJ ^{[1
]}

Hobart, KD ^{[1
]}

Bracker, AS ^{[1
]}

Justh, E ^{[1
]}

Mittereder, J ^{[1
]}

Chang, W ^{[1
]}

Turner, NH ^{[1
]}

Bass, R ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ISDRS.2001.984577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 554

页数：1

共 50 条

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