Quantum Hall Effect as an Electrical Resistance Standard

被引：0
|
作者：
Boudinov, H. [1 ]
Boff, M. A. S. [1 ]
机构：
[1] Univ Fed Rio Grande do Sul, Inst Fis, Porto Alegre, RS, Brazil
来源：
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 | 2011年 / 39卷 / 01期
关键词：
D O I：
10.1149/1.3615173
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A special modulation doped Al0.3Ga0.7As/GaAs sample was used in this manuscript with a main objective to demonstrate the application of the integer quantum Hall effect as an universal standard for electrical resistance measurements. The n-type impurities are introduced at a distance of 20 nm from the hetero interface. Some of the electrons are captured in the potential well, far from the impurity atoms. Extremely high carrier mobility (m(eff) = 480000 cm(2)/Vs at T = 4.2 K) is obtained due to this separation through a significant reduction in ionized impurity scattering.
引用
收藏
页码：31 / 36
页数：6
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