Quantum Hall Effect as an Electrical Resistance Standard

被引：0

作者：

Boudinov, H. ^{[1
]}

Boff, M. A. S. ^{[1
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, Porto Alegre, RS, Brazil

来源：

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 | 2011年 / 39卷 / 01期

关键词：

D O I：

10.1149/1.3615173

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A special modulation doped Al0.3Ga0.7As/GaAs sample was used in this manuscript with a main objective to demonstrate the application of the integer quantum Hall effect as an universal standard for electrical resistance measurements. The n-type impurities are introduced at a distance of 20 nm from the hetero interface. Some of the electrons are captured in the potential well, far from the impurity atoms. Extremely high carrier mobility (m(eff) = 480000 cm(2)/Vs at T = 4.2 K) is obtained due to this separation through a significant reduction in ionized impurity scattering.

引用

页码：31 / 36

页数：6

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