Front-side Mid-Level Tungsten TSV Integration for High-Density 3D Applications

被引：0
|
作者：
Mattis, Brian [1 ]
Soirez, Lovelace [1 ]
Bullock, Catherine [1 ]
Martini, Dave [1 ]
Jensen, Sara [2 ]
Levy, James [2 ]
Jones, Adam [2 ]
机构：
[1] Novati Technol, 2706 Montopolis Dr, Austin, TX 78741 USA
[2] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
来源：
2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) | 2016年
关键词：
TSV; Tungsten; TSV Reveal; Via-middle TSV; 3D Integration;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into advanced-node logic wafers after metal-4. This late-TSV-middle approach offers the ability to build 3D technology into commercially available 90nm-node CMOS, while avoiding many of the challenges associated with TSV-last integrations. We also demonstrate a TSV-reveal process compatible with small-diameter W TSVs.
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页数：4
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