Front-side Mid-Level Tungsten TSV Integration for High-Density 3D Applications

被引：0

作者：

Mattis, Brian ^{[1
]}

Soirez, Lovelace ^{[1
]}

Bullock, Catherine ^{[1
]}

Martini, Dave ^{[1
]}

Jensen, Sara ^{[2
]}

Levy, James ^{[2
]}

Jones, Adam ^{[2
]}

机构：

[1] Novati Technol, 2706 Montopolis Dr, Austin, TX 78741 USA

[2] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

来源：

2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) | 2016年

关键词：

TSV; Tungsten; TSV Reveal; Via-middle TSV; 3D Integration;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into advanced-node logic wafers after metal-4. This late-TSV-middle approach offers the ability to build 3D technology into commercially available 90nm-node CMOS, while avoiding many of the challenges associated with TSV-last integrations. We also demonstrate a TSV-reveal process compatible with small-diameter W TSVs.

引用

页数：4

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