Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

被引：16
|
作者：
Groves, R [1 ]
Stein, K [1 ]
Harame, D [1 ]
Jadus, D [1 ]
机构：
[1] IBM CORP,MICROELECT DIV,HOPEWELL JCT,NY 12533
来源：
PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1996年
关键词：
D O I：
10.1109/BIPOL.1996.554635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：153 / 156
页数：4
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