Accurate analysis of silicon, VLSI-technology compatible spiral inductors

被引：0
|
作者：
Guasticchi, B [1 ]
Ciampolini, P [1 ]
Roselli, L [1 ]
Stopponi, G [1 ]
机构：
[1] Univ Perugia, Dipartimento Ingn Elettr & Informaz, I-06125 Perugia, Italy
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the application of a full-wave electromagnetic simulator to the analysis of solid-state (CMOS-compatible) inductors is described. By means of the simulation, performance of actual inductors has been correctly predicted and characterization of equivalent-circuit components has been carried out. Impact of some design options on the inductor performance has been discussed. Detrimental effects related to the specific technology adopted have also been evaluated and physically interpreted.
引用
收藏
页码：1157 / 1160
页数：4
相关论文
共 50 条
  • [1] Accurate analysis of silicon, VLSI-technology compatible spiral inductors
    Guasticchi, B., 2000, IEEE, Piscataway, NJ, United States (02):
  • [2] The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology
    Park, M
    Lee, S
    Kim, CS
    Yu, HK
    Nam, KS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) : 1953 - 1959
  • [3] INTEGRATED FILTERS IN VLSI-TECHNOLOGY
    LUDER, E
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1978, 32 (10): : 381 - 389
  • [4] A comparative analysis of monolithic spiral inductors in silicon bipolar technology
    Ragonese, E
    Biondi, T
    Longo, G
    Palmisano, G
    2003 SOUTHWEST SYMPOSIUM ON MIXED-SIGNAL DESIGN, 2003, : 144 - 149
  • [5] Multilevel-spiral inductors using VLSI interconnect technology
    Burghartz, JN
    Jenkins, KA
    Soyuer, M
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (09) : 428 - 430
  • [6] Artificial neural network in analog VLSI-technology
    Geske, G
    Stüpmann, R
    Rode, S
    BEC 2002: Proceedings of the 8th Biennial Baltic Electronic Conference, 2002, : 115 - 118
  • [7] RECENT DEVELOPMENTS IN THE INTERPRETATION OF SPREADING RESISTANCE PROFILES FOR VLSI-TECHNOLOGY
    VANDERVORST, W
    CLARYSSE, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 679 - 683
  • [8] The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology
    Yim, SM
    Chen, T
    O, KT
    PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2000, : 157 - 160
  • [9] RECENT DEVELOPMENTS IN THE INTERPRETATION OF SPREADING RESISTANCE PROFILES FOR VLSI-TECHNOLOGY
    VANDERVORST, W
    CLARYSSE, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C374 - C374
  • [10] IC compatible planar inductors on silicon
    Ronkainen, H
    Kattelus, H
    Tarvainen, E
    Riihisaari, T
    Andersson, M
    Kuivalainen, P
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1997, 144 (01): : 29 - 35
12345