Accurate analysis of silicon, VLSI-technology compatible spiral inductors

被引：0
|
作者：
Guasticchi, B [1 ]
Ciampolini, P [1 ]
Roselli, L [1 ]
Stopponi, G [1 ]
机构：
[1] Univ Perugia, Dipartimento Ingn Elettr & Informaz, I-06125 Perugia, Italy
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the application of a full-wave electromagnetic simulator to the analysis of solid-state (CMOS-compatible) inductors is described. By means of the simulation, performance of actual inductors has been correctly predicted and characterization of equivalent-circuit components has been carried out. Impact of some design options on the inductor performance has been discussed. Detrimental effects related to the specific technology adopted have also been evaluated and physically interpreted.
引用
收藏
页码：1157 / 1160
页数：4
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