Thermally induced defects in silicon irradiated with fast neutrons

被引：3

作者：

Misiuk, A. ^{[1
]}

Wierzchowski, W. ^{[2
]}

Wieteska, K. ^{[3
]}

Romanowski, P. ^{[4
]}

Bak-Misiuk, J. ^{[4
]}

Prujszczyk, M. ^{[1
]}

Londos, C. A. ^{[5
]}

Graeff, W. ^{[6
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Inst Atom Energy, PL-05400 Otwock, Poland

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[5] Univ Athens, Athens 15784, Greece

[6] DESY, HASYLAB, D-22603 Hamburg, Germany

来源：

RADIATION PHYSICS AND CHEMISTRY | 2009年 / 78卷

关键词：

Silicon; Neutron irradiation; Imaging; Defect structure; OXYGEN PRECIPITATION; CZ-SI;

D O I：

10.1016/j.radphyschem.2009.03.087

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Defect structure of Czochralski grown (111) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5 x 10(16) cm(-2)) and annealed at up to 1400 K, also under hydrostatic At pressure equal to 1.1 GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400 K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures-pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：S67 / S70

页数：4

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