CHARACTERISTICS OF RECOMBINATION IN COMPLEX RADIATION DEFECTS FORMED BY FAST-NEUTRONS IN SILICON

被引：0
|
作者：
KRAMERAGEEV, EA [1 ]
MIRONOV, YA [1 ]
机构：
[1] MOSCOW ENGN PHYS INST, MOSCOW, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 12期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：1468 / 1471
页数：4
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