AN INVESTIGATION OF RADIATION DEFECTS IN SILICON-CARBIDE IRRADIATED WITH FAST ELECTRONS

被引：0
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作者：
BALLANDOVICH, VS
VIOLINA, GN
机构：
来源：
CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS | 1987年 / 13卷 / 3-4期
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：189 / 193
页数：5
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