共 50 条
- [1] AN INVESTIGATION OF RADIATION DEFECTS IN SILICON-CARBIDE IRRADIATED WITH FAST ELECTRONS CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1987, 13 (3-4): : 189 - 193
- [2] PHOTOCONDUCTIVITY SPECTRA OF GERMANIUM CRYSTALS DOPED WITH OXYGEN AND IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (07): : 1577 - +
- [3] CATHODOLUMINESCENCE OF EPITAXIAL GAN AND AIN FILMS IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 599 - 600
- [4] PHOTOLUMINESCENCE OF SILICON-CRYSTALS IRRADIATED WITH FAST ELECTRONS AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1100 - 1102
- [5] CONCERNING PHOTOCONDUCTIVITY SPECTRA OF N-TYPE SILICON IRRADIATED BY FAST ELECTRONS SOVIET PHYSICS-SOLID STATE, 1964, 5 (07): : 1332 - 1335
- [7] ENERGY OF IONIZATION BY ELECTRONS IN GERMANIUM AND SILICON CARBIDE CRYSTALS SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (12): : 3000 - &
- [8] INFLUENCE OF TRAPPING EFFECTS ON PHOTOCONDUCTIVITY SPECTRA OF N-TYPE SILICON IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 916 - 917
- [9] FINE STRUCTURE OF RED CATHODOLUMINESCENCE BAND OF BETA SIC IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 744 - &
- [10] PHOTOELECTRIC PROPERTIES OF SILICON CARBIDE IRRADIATED WITH FAST NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 994 - &