Influence of trapping on silicon microstrip detector design and performance

被引：0
|
作者：
Kramberger, G [1 ]
Cindro, V [1 ]
Mandic, I [1 ]
Mikuz, M [1 ]
机构：
[1] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
来源：
2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4 | 2002年
关键词：
simulation; silicon strip detectors; irradiation; charge collection efficiency; charge trapping;
D O I：
10.1109/NSSMIC.2001.1009703
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New systematic measurements of effective carrier trapping times were used as an input to simulation of irradiated silicon strip detector operation. Charge collection efficiency (CCE) dependence on bias voltage, magnetic field, irradiation particle type, fluence and detector design was investigated. It was observed, that irradiated detectors processed on standard n-silicon material with n(+) strips performed better than those with p(+) strips. At Phi(eq) = 2 X 10(14) cm(-2) the difference is around 10% at voltages well above V-FD and even larger for lower voltages. A few percent difference in CCE for different track paths across the strip is predicted. Effective Lorentz angle was found to be independent on irradiation level. A non-negligible amount of charge appears also on neighboring strips as a consequence of charge trapping. The influence of detector thickness and strip width on induced charge was also studied.
引用
收藏
页码：909 / 913
页数：5
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