Preparation of single-oriented (111)Vn film with low-resistivity and its application as diffusion barrier between Cu and Si

被引：7

作者：

Yoshimoto, K

Kaiya, F

Shinkai, S

Sasaki, K

Yanagisawa, H

机构：

[1] Asahikawa Natl Coll Technol, Dept Elect & Comp Engn, Asahikawa, Hokkaido 0718142, Japan

[2] Takuma Natl Coll Technol, Dept Control Engn, Kagawa 7691192, Japan

[3] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

[4] Kitami Inst Technol, Fac Engn, Dept Elect & Elect Engn, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 1A期

关键词：

LSI contact structure; Cu metallization; diffusion barrier; low-resistivity (111)VN film; single-oriented growth; metal/semiconductor interface;

D O I：

10.1143/JJAP.45.215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the Optimum conditions for preparing single-oriented (111)VN film with low-resistivity by reactive sputtering and prepared a Cu/VN/Si contact system to apply the (111)VN film as a diffusion barrier used in the Cu metallization technology of Si-LSI. Then, influences of various sputtering conditions on the film quality of VN were investigated, and the thermal stability of the contact system was evaluated by X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses. As a result, it is revealed that a nearly stoichiometric single-oriented (111)VN film with a resistivity of 57 mu Omega cm can be prepared under the optimum sputtering conditions, and the Cu/VN/Si contact system is satisfactorily stable up to 700 degrees C, even when the thickness of the VN diffusion barrier is reduced to 30nm..

引用

页码：215 / 220

页数：6

共 30 条

[21] INVESTIGATION OF Ta/Ni-Al INTEGRATED FILM USED AS A DIFFUSION BARRIER LAYER BETWEEN Cu AND Si
Yang, Lim
Wang, Shi Jie
Huo, Ji Chuan
Li, Xiao Hong
Guo, Jian Xin
Dai, Xiu Hong
Ma, Lian Xi
Zhang, Xiang Yi
Liu, Bao Ting
SURFACE REVIEW AND LETTERS, 2014, 21 (06)
[22] Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum
Hsieh, S. H.
Chien, C. M.
Liu, W. L.
Chen, W. J.
APPLIED SURFACE SCIENCE, 2009, 255 (16) : 7357 - 7360
[23] Application of HfN/Hf bilayered film as a diffusion barrier for Cu metallization system of Si large-scale integration
Yoshimoto, K
Shinkai, S
Sasaki, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1835 - 1839
[24] Application of Zr-Si Film as Diffusion Barrier in Cu Metallization (vol 10, pg H299, 2007)
Wang, Ying
Cao, Fei
Song, Zhongxiao
Zhao, Chun-Hui
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (08) : S11 - S11
[25] Structural evolution of Zr-Cu-Ni-Al-N thin film metallic glass and its diffusion barrier performance in Cu-Si interconnect at elevated temperature
Lee, Joseph
Duh, Jenq-Gong
VACUUM, 2017, 142 : 81 - 86
[26] PREPARATION OF LOW-REFLECTIVITY AL-SI FILM USING DC MAGNETRON SPUTTERING AND ITS APPLICATION TO MULTILEVEL METALLIZATION
KAMOSHIDA, K
MAKINO, T
NAKAMURA, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1340 - 1345
[27] STOICHIOMETRY OF TA-N FILM AND ITS APPLICATION FOR DIFFUSION BARRIER IN THE AL3TA/TA-N/SI CONTACT SYSTEM
SASAKI, K
NOYA, A
UMEZAWA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (06): : 1043 - 1047
[28] Stoichiometry of Ta-N film and its application for diffusion barrier in the Al3Ta/Ta-N/Si contact system
Sasaki, Katsutaka, 1600, (29):
[29] Auger electron spectroscopy study on the stability and the interfacial reaction of Ta, Ta-N and TaN films as a diffusion barrier between Cu9Al4 film and Si
Noya, Atsushi
Sasaki, Katsutaka
Takeyama, Mayumi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (02): : 911 - 915
[30] AUGER-ELECTRON SPECTROSCOPY STUDY ON THE STABILITY AND THE INTERFACIAL REACTION OF TA, TA-N AND TAN FILMS AS A DIFFUSION BARRIER BETWEEN CU9AL4 FILM AND SI
NOYA, A
SASAKI, K
TAKEYAMA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 911 - 915

← 1 2 3 →