Preparation of single-oriented (111)Vn film with low-resistivity and its application as diffusion barrier between Cu and Si

被引：7

作者：

Yoshimoto, K

Kaiya, F

Shinkai, S

Sasaki, K

Yanagisawa, H

机构：

[1] Asahikawa Natl Coll Technol, Dept Elect & Comp Engn, Asahikawa, Hokkaido 0718142, Japan

[2] Takuma Natl Coll Technol, Dept Control Engn, Kagawa 7691192, Japan

[3] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

[4] Kitami Inst Technol, Fac Engn, Dept Elect & Elect Engn, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 1A期

关键词：

LSI contact structure; Cu metallization; diffusion barrier; low-resistivity (111)VN film; single-oriented growth; metal/semiconductor interface;

D O I：

10.1143/JJAP.45.215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the Optimum conditions for preparing single-oriented (111)VN film with low-resistivity by reactive sputtering and prepared a Cu/VN/Si contact system to apply the (111)VN film as a diffusion barrier used in the Cu metallization technology of Si-LSI. Then, influences of various sputtering conditions on the film quality of VN were investigated, and the thermal stability of the contact system was evaluated by X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses. As a result, it is revealed that a nearly stoichiometric single-oriented (111)VN film with a resistivity of 57 mu Omega cm can be prepared under the optimum sputtering conditions, and the Cu/VN/Si contact system is satisfactorily stable up to 700 degrees C, even when the thickness of the VN diffusion barrier is reduced to 30nm..

引用

页码：215 / 220

页数：6

共 30 条

[1] Sequential single-oriented growth of (111) Cu/(111) HfN/(002) Hf trilayered film on (001) Si and its thermal stability
Shinkai, S
Yoshimoto, K
Kitada, Y
Sasaki, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5995 - 5999
[2] Sequential single-oriented growth of (111) Cu/(111) HfN/(002) Hf trilayered film on (001) Si and its thermal stability
Shinkai, Satoko
Yoshimoto, Ken-Ichi
Kitada, Yasuhiro
Sasaki, Katsutaka
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (10): : 5995 - 5999
[3] Single-oriented growth of (111) Cu film on thin ZrN/Zr bilayered film for ULSI metallization
Yanagisawa, H
Sasaki, K
Miyake, H
Abe, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5987 - 5991
[4] Single-oriented growth of (111) Cu film on thin ZrN/Zr bilayered film for ULSI metallization
Yanagisawa, Hideto
Sasaki, Katsutaka
Miyake, Hidekazu
Abe, Yoshio
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (10): : 5987 - 5991
[5] Epitaxial growth of HfN film and sequential single-oriented growth of Al/HfN bilayered film on (001) and (111) Si
Shinkai, S
Sasaki, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A): : 3646 - 3650
[6] Epitaxial growth of HfN film and sequential single-oriented growth of Al/HfN bilayered film on (001) and (111) Si
Shinkai, Satoko
Sasaki, Katsutaka
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (6 A): : 3646 - 3650
[7] Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO2
Takeyama, MB
Itoi, T
Satoh, K
Sakagami, M
Noya, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2542 - 2547
[8] Application of Zr-Si film as diffusion barrier in Cu metallization
Wang, Ying
Cao, Fei
Song, Zhongxiao
Zhaoa, Chun-Hui
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (10) : H299 - H301
[9] Realization of Cu(111) single-oriented state on SiO2 by annealing Cu-Zr film and the thermal stability of Cu-Zr/ZrN/Zr/Si contact system
Sasaki, K
Miyake, H
Shinkai, S
Abe, Y
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (07): : 4661 - 4665
[10] Initial silicide formation process of single oriented (002) Hf film on Si and its diffusion barrier property
Shinkai, S
Sasaki, K
Abe, Y
Yanagisawa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 2002 - 2006

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