Sequential single-oriented growth of (111) Cu/(111) HfN/(002) Hf trilayered film on (001) Si and its thermal stability

被引：0
|
作者：
Shinkai, Satoko [1 ]
Yoshimoto, Ken-Ichi [2 ]
Kitada, Yasuhiro [1 ]
Sasaki, Katsutaka [1 ]
机构：
[1] Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
[2] Department of Electrical Engineering, Asahikawa Natl. Coll. of Technology, Asahikawa 071-8142, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 10期
关键词：
D O I：
10.1143/jjap.39.5995
中图分类号：
学科分类号：
摘要：
19
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页码：5995 / 5999
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  • [1] Sequential single-oriented growth of (111) Cu/(111) HfN/(002) Hf trilayered film on (001) Si and its thermal stability
    Shinkai, S
    Yoshimoto, K
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    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5995 - 5999
  • [2] Epitaxial growth of HfN film and sequential single-oriented growth of Al/HfN bilayered film on (001) and (111) Si
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    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A): : 3646 - 3650
  • [3] Epitaxial growth of HfN film and sequential single-oriented growth of Al/HfN bilayered film on (001) and (111) Si
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  • [4] Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
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  • [5] Realization of sequential epitaxial growth of Cu/HfN bilayered films on (111) and (001) Si
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