Effects of Lattice Temperature on the Various Elements of Heat Sources in Silicon Carbide Polymers (6H-SiC and 3C-SiC) Semiconductor Laser

被引：0
|
作者：
Marjani, Saeid [1 ]
Marjani, Hamid [2 ]
机构：
[1] Islamic Azad Univ, Arak Branch, Young Researchers Club, Arak, Iran
[2] Islamic Azad Univ, Arak Branch, Dept Elect Engn, Arak, Iran
来源：
ASIAN JOURNAL OF CHEMISTRY | 2012年 / 24卷 / 07期
关键词：
Lattice temperature; Heat sources; Silicon carbide polymers; Semiconductor laser; SURFACE-EMITTING LASERS;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In present paper, the various elements of heat sources within a silicon carbide polymers (6H-SiC and 3C-SiC) semiconductor laser device were analyzed upon the increment of lattice temperature. The device employs 3C-SiC quantum well, which is sandwiched between two layers of 6H-SiC as cladding regions that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroelectricity of 6H using a numerical simulator. The thermal resistance used to model the electrical contacts causes an approximate temperature rise by 29.3 K above the ambient temperature (300 K) at a bias of 2.5 V and a 17.094 % decrease from 1.3432e10 W/cm(3) to 1.1136e10 W/cm(3) in the total heat power is observed with temperature increment.
引用
收藏
页码：3123 / 3125
页数：3
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