Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures.

被引：0
|
作者：
Lebedev, A. A. [1 ]
Abramov, P. L. [1 ]
Agrinskaya, N. V. [1 ]
Kozub, V. I. [1 ]
Kuznetsov, A. N. [1 ]
Lebedev, S. P. [1 ]
Oganesyan, G. A. [1 ]
Sorokin, L. M. [1 ]
Chernyaev, A. V. [1 ]
Shamshur, D. V. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
3C-SiC; Heterostructures; Hall effect; magnetoresistance; metal--insulator transition;
D O I：
10.4028/www.scientific.net/MSF.600-603.541
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6H-SiC substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC heterostructures in temperature range 1,4 - 300 K. At helium temperatures it was founded low samples resistance and negative magneto-resistance in week magnetic field ( similar to 1 T). Analysis of obtained results shows, that low samples resistance can be connected with metal-isolation junction in 3C-SiC epitaxial films..
引用
收藏
页码：541 / 544
页数：4
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