Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

被引：0
|
作者：
A. A. Lebedev
M. V. Zamorianskaya
S. Yu. Davydov
D. A. Kirilenko
S. P. Lebedev
L. M. Sorokin
D. B. Shustov
M. P. Scheglov
机构：
[1] Russian Academy of Sciences,Ioffe Physical
来源：
Semiconductors | 2013年 / 47卷
关键词：
Transition Layer; Epitaxial Layer; Dark Gray Region; Carbon Vacancy; Poly Type;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.
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页码：1539 / 1543
页数：4
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