Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance

被引：0

作者：

van der Meulen, J. M. M. ^{[1
]}

de Vreede, L. C. N. ^{[1
]}

机构：

[1] Delft Univ Technol, Elect Res Lab, Delft, Netherlands

来源：

2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2017年

关键词：

linearity; intermodulation distortion; bipolar transistor; semiconductor device; doping profile; amplifiers; base-collector capacitance; AMPLIFIERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A frequency, bias and output power independent linearization technique for reducing the non-linear base-collector capacitance related distortion is proposed. Based on Volterra series analysis, the optimum base-collector capacitance for linear device operation is determined while respecting physical constrains. It is shown that by modifying the extrinsic base-collector region for an otherwise uncompromised device, the C-bc linearity compensation can be included within the transistor design itself. The practicality of this implementation is demonstrated by considering the doping profile accuracy requirements for achieving a significant OIP3 improvement of at least 5dB.

引用

页码：126 / 129

页数：4

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