Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance

被引：0

作者：

van der Meulen, J. M. M. ^{[1
]}

de Vreede, L. C. N. ^{[1
]}

机构：

[1] Delft Univ Technol, Elect Res Lab, Delft, Netherlands

来源：

2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2017年

关键词：

linearity; intermodulation distortion; bipolar transistor; semiconductor device; doping profile; amplifiers; base-collector capacitance; AMPLIFIERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A frequency, bias and output power independent linearization technique for reducing the non-linear base-collector capacitance related distortion is proposed. Based on Volterra series analysis, the optimum base-collector capacitance for linear device operation is determined while respecting physical constrains. It is shown that by modifying the extrinsic base-collector region for an otherwise uncompromised device, the C-bc linearity compensation can be included within the transistor design itself. The practicality of this implementation is demonstrated by considering the doping profile accuracy requirements for achieving a significant OIP3 improvement of at least 5dB.

引用

页码：126 / 129

页数：4

共 50 条

[31] AlGaAs/GaAs heterojunction bipolar transistors with reduced base-collector capacitance fabricated using selective metallorganic chemical vapor deposition
Son, Jeong-Hwan
Kim, Chang-Tae
Hong, Song-Cheol
Kwon, Young-Se
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (2 B): : 1085 - 1088
[32] Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
Caffin, D
Duchenois, AM
Heliot, F
Besombes, C
Benchimol, JL
Launay, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (06) : 930 - 936
[33] Simple method to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors
Lee, SH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (04) : 647 - 650
[34] Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance
Nadda, Kanika
Kumar, M. Jagadesh
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (09) : 2956 - 2959
[35] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS
BONNEFOI, AR
CHOW, DH
MCGILL, TC
APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890
[36] ALGAAS/GAAS HBTS WITH REDUCED BASE-COLLECTOR CAPACITANCE BY USING BURIED SIO2 AND POLYCRYSTALLINE GAAS IN THE EXTRINSIC BASE AND COLLECTOR
MOCHIZUKI, K
NAKAMURA, T
TANOUE, T
MASUDA, H
HORIUCHI, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2124 - 2125
[37] CURRENT DEPENDENCE OF BASE COLLECTOR CAPACITANCE OF BIPOLAR-TRANSISTORS
LIU, W
HARRIS, JS
SOLID-STATE ELECTRONICS, 1992, 35 (08) : 1051 - 1057
[38] Parameter extraction of a base-collector equivalent circuit model for sige heterojunction bipolar transistors
Lee, S
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 38 (05) : 384 - 387
[39] Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors
Assous, M
de Berranger, E
Regolini, JL
Mouis, M
Hernandez, C
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1740 - 1744
[40] Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Takebe, Naoaki
Miyamoto, Yasuyuki
IEICE TRANSACTIONS ON ELECTRONICS, 2012, E95C (05): : 917 - 920

← 1 2 3 4 5 →