High-speed InGaP/GaAs HBT's using a simple collector undercut technique to reduce base-collector capacitance

被引：29
|
作者：
Chen, WL
Chau, HF
Tutt, M
Ho, MC
Kim, TS
Henderson, T
机构：
[1] Corporate R. and D., System Components Laboratory, Texas Instruments Inc., Dallas
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 07期
关键词：
D O I：
10.1109/55.596935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-speed InGaP/GaAs HBT's were fabricated using a simple collector undercut (CU) technique to physically remove the collector material underneath the extrinsic base region by selective etching for seducing base-collector capacitance (C-BC) The best HBT's achieved a f(T) of 80 GHz and a f(max) (MSG/MAG) of 171 GHz. To our knowledge, this is the highest f(max) (MSG/MAG) ever reported for the InGaP/GaAs HBT's. Compared to the HBT's without CU's, the CU HBT's shored a factor of 1.38 times improvement in the highest achievable f(max) (MSG/MAG) due to the significant reduction of the C-BC.
引用
收藏
页码：355 / 357
页数：3
相关论文
共 50 条
  • [1] High-speed InGaP/GaAs HBT's using a simple collector undercut technique to reduce base-collector capacitance
    Texas Instruments Inc, Dallas, United States
    IEEE Electron Device Lett, 7 (355-357):
  • [2] High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance
    Kim, W
    Lee, KH
    Chung, MC
    Kang, JC
    Kim, B
    ELECTRONICS LETTERS, 2001, 37 (20) : 1259 - 1261
  • [3] Polycrystal isolation of InGaP/GaAs HBT's to reduce collector capacitance
    Hitachi Ltd, Tokyo, Japan
    IEEE Electron Device Lett, 2 (47-49):
  • [4] Polycrystal isolation of InGaP/GaAs HBT's to reduce collector capacitance
    Mochizuki, K
    Ouchi, K
    Hirata, K
    Tanoue, T
    Oka, T
    Masuda, H
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (02) : 47 - 49
  • [5] Base-collector design optimisation of InGaP/GaAs DHBTs
    Rezazadeh, AA
    Sotoodeh, M
    Dharmasiri, N
    8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2000, : 99 - 104
  • [6] Joint extraction of the base and collector resistances with the base-collector capacitance split of HBT/BJT transistors
    Huszka, Z.
    Seebacher, E.
    Pflanzl, W.
    PROCEEDINGS OF THE 2006 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2006, : 104 - +
  • [7] UNIFIED HBT BASE PUSH-OUT AND BASE-COLLECTOR CAPACITANCE MODEL
    DAVIS, RG
    ALLENSON, MB
    SOLID-STATE ELECTRONICS, 1995, 38 (02) : 481 - 485
  • [8] ALGAAS/GAAS HBTS WITH REDUCED BASE-COLLECTOR CAPACITANCE BY USING BURIED SIO2 AND POLYCRYSTALLINE GAAS IN THE EXTRINSIC BASE AND COLLECTOR
    MOCHIZUKI, K
    NAKAMURA, T
    TANOUE, T
    MASUDA, H
    HORIUCHI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2124 - 2125
  • [9] Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process
    Shin, H
    Gaessler, C
    Leier, H
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) : 297 - 299
  • [10] Frequency increase of an InP-based HBT using improved layout design and base-collector undercut process
    Lee, Jongwon
    Lee, Kiwon
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2020, 62 (10) : 3107 - 3111
12345