Non-Volatile Approximate Arithmetic Circuits Using Scalable Hybrid Spin-CMOS Majority Gates

被引:0
|
作者
Shabani, Ahmad [1 ]
Sabri, Mohammad [2 ]
Khabbazan, Bahareh [3 ]
Timarchi, Somayeh [1 ]
机构
[1] Shahid Beheshti Univ, Fac Elect Engn, Tehran 1983969411, Iran
[2] Univ Tehran, Sch Elect & Comp Engn, Tehran 14395515, Iran
[3] Iran Univ Sci & Technol, Sch Elect & Comp Engn, Tehran 1311416846, Iran
基金
中国国家自然科学基金; 中国博士后科学基金; 加拿大自然科学与工程研究理事会;
关键词
Compressors; Spintronics; Magnetic tunneling; Transistors; Resistance; Nonvolatile memory; Magnetic domains; Compressor; approximate computing; spin-CMOS majority gate; non-volatility; low leakage power; heuristic majority-inverter graph (HMIG); ARCHITECTURE;
D O I
10.1109/TCSI.2020.3044248
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the nanoscale era, leakage/static power dissipation has become an inevitable and important issue for CMOS devices. To alleviate this issue, we propose to use spintronic devices with near-zero leakage power and non-volatility as key components in arithmetic circuits for error-resilient applications. To this end, spintronic threshold devices are first utilized to construct highly-scalable majority gates (MGs) based on spin-CMOS technology. These MGs are then used in the design of compressors for constructing multipliers and accumulators. For an MG-based compressor, the truth table of a conventional compressor is transformed to ensure that the outputs depend only on the number of input "1"s. To synthesize and optimize the MG-based circuits, a heuristic majority-inverter graph (HMIG) is further proposed for the design of an accurate and two approximate non-volatile 4-2 compressors (denoted as MG-EC, MG-AC1 and MG-AC2). Due to the high scalability of the MGs, approximate compressors with a larger number of inputs can be devised using the same method. Compared to previous designs, the proposed 4-2 compressors show shorter critical path delays and lower energy consumption; MG-AC1 and MG-AC2 also achieve a higher accuracy than state-of-the-art approximate designs. For achieving a similar image quality in image compression, the multiplier implementations using MG-AC1 and MG-AC2 result in more significant reductions in delay and energy than those using other approximate designs.
引用
收藏
页码:1259 / 1268
页数:10
相关论文
共 50 条
  • [21] A Scalable and Persistent Key-Value Store Using Non-Volatile Memory
    Kim, Doyoung
    Choi, Won Gi
    Sung, Hanseung
    Park, Sanghyun
    SAC '19: PROCEEDINGS OF THE 34TH ACM/SIGAPP SYMPOSIUM ON APPLIED COMPUTING, 2019, : 464 - 467
  • [22] Fault Tolerant Approximate Computing Using Emerging Non-Volatile Spintronic Memories
    Oboril, Fabian
    Shirvanian, Azadeh
    Tahoori, Mehdi
    2016 IEEE 34TH VLSI TEST SYMPOSIUM (VTS), 2016,
  • [23] Large Non-Volatile Frequency Tuning of Spin Hall Nano-Oscillators Using Circular Memristive Nano-Gates
    Khademi, Maha
    Kumar, Akash
    Rajabali, Mona
    Dash, Saroj P.
    Akerman, Johan
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (02) : 268 - 271
  • [24] One-bit Non-Volatile Memory Cell Using Memristor and Transmission Gates
    Ho, Patrick W. C.
    Almurib, Haider Abbas F.
    Kumar, T. Nandha
    2014 2ND INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN (ICED), 2014, : 244 - 248
  • [25] Non-volatile D-latch for Sequential Logic Circuits using Memristors
    Ho, Patrick W. C.
    Almurib, Haider Abbas F.
    Kumar, T. Nandha
    TENCON 2015 - 2015 IEEE REGION 10 CONFERENCE, 2015,
  • [26] Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology
    Bazzi, Hussein
    Harb, Adnan
    Aziza, Hassen
    Moreau, Mathieu
    2018 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM), 2018, : 228 - 231
  • [27] Ultra-Low Power Volatile and Non-Volatile Asynchronous Circuits using Back-Biasing
    Beigne, E.
    Christmann, J-F.
    Zianbetov, E.
    Di Pendina, G.
    2015 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN (ECCTD), 2015, : 348 - 351
  • [28] Design of Non-Volatile Asynchronous Circuit using CMOS-FDSOI/FinFET Technologies
    Bhimsaria, Nikunj
    Chaturvedi, Nitin
    Gurunarayanan, S.
    2016 INTERNATIONAL CONFERENCE ON COMPUTING, ANALYTICS AND SECURITY TRENDS (CAST), 2016, : 462 - 465
  • [29] A novel architecture of non-volatile magnetic arithmetic logic unit using magnetic tunnel junctions
    Guo, Wei
    Prenat, Guillaume
    Dieny, Bernard
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (16)
  • [30] Design of a Novel Hybrid CMOS Non-Volatile SRAM Memory in 130nm RRAM Technology
    Bazzi, Hussein
    Aziza, Hassen
    Moreau, Mathieu
    Harb, Adnan
    2020 15TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS 2020), 2020,