Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes

被引：3

作者：

Niu, Xiping ^{[1
]}

Wei, Xiaoguang ^{[1
]}

An, Yunlai ^{[1
]}

Sang, Ling ^{[1
]}

Wu, Peifei ^{[1
]}

Zhou, Yang ^{[1
]}

Sun, Botao ^{[2
]}

Zhang, Wenting ^{[1
]}

Liu, Rui ^{[1
]}

Du, Zechen ^{[1
]}

Li, Chenmeng ^{[1
]}

Shen, Zhanwei ^{[3
]}

Yang, Tongtong ^{[1
]}

Luo, Weixia ^{[1
]}

Tian, Yan ^{[1
]}

Yang, Fei ^{[1
]}

机构：

[1] Beijing Inst Smart Energy, State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China

[2] Beijing Century Goldray Semicond Co Ltd, Beijing 100176, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 608卷

关键词：

A1; 4H-SiC; A2; JBS; A3; Diodes; B1; Temperature; B2; Schottky Barrier; B3; Reverse Leakage Current;

D O I：

10.1016/j.jcrysgro.2023.127103

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Annealing treatment has an important effect on the electrical properties of Schottky diodes. In this paper, the effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes was studied. The reverse leakage current of the diode annealed at 500 degrees C is higher than that of the diode annealed at 450 degrees C. This is because the Schottky barrier height of the diode annealed at 500 degrees C is decreased by 0.08 eV, which leads to a large reverse leakage current. Meanwhile, the Schottky barrier height of the diode annealed at 500 degrees C is decreased more significantly with the increase of measurement temperature, therefore the reverse leakage current increases significantly.

引用

页数：4

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