Correlation between leakage current and ion-irradiation induced defects in 4H-SiC Schottky diodes

被引：3
|
作者：
Raineri, V.
Roccaforte, F.
Libertino, S.
Ruggiero, A.
Massimino, V.
Calcagno, L.
机构：
[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy
[2] Dipartimento Fis & Astron, I-95123 Catania, Italy
来源：
Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷
关键词：
Schottky diodes; ion-irradiation; defects; DLTS;
D O I：
10.4028/www.scientific.net/MSF.527-529.1167
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1 x 10(9) cm(-2) and 1.8 x 10(13) cm(-2). After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z(1)/Z(2) center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.
引用
收藏
页码：1167 / 1170
页数：4
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