Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors

被引：2

作者：

Shin, Wonjun ^{[1
]}

Kim, Sangwoo ^{[2
]}

Koo, Ryun-Han ^{[1
]}

Kwon, Dongseok ^{[1
]}

Kim, Jae-Joon ^{[1
]}

Kwon, Deok-Hwang ^{[3
]}

Kwon, Daewoong ^{[2
]}

Lee, Jong-Ho ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Dept Elect & Comp Engn, Seoul, South Korea

[2] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

[3] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 02792, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Channel length; 1/f noise; ferroelectric junctionless thin-film transistor (FE JL TFT); low-frequency noise (LFN); NANOWIRE TRANSISTORS;

D O I：

10.1109/LED.2023.3267134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (Ls). The findings reveal that the magnitude of 1/f noise decreases with a decrease in L, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L.

引用

页码：1003 / 1006

页数：4

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