High-Frequency Performance of Trigate Poly-Si Thin-Film Transistors by Microwave Annealing

被引：10
|
作者：
Hu, Hsin-Hui [1 ]
Huang, Hsin-Ping [1 ]
机构：
[1] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 10607, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 04期
关键词：
Microwave annealing (MWA); radio frequency (RF); polycrystalline silicon thin-film transistors (poly-Si TFTs);
D O I：
10.1109/LED.2015.2399498
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter investigates the high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) using low temperature microwave annealing (MWA). MWA exhibits sufficient dopant activation efficiency, good short channel effect control, and a higher maximum oscillation frequency (f(max)) of poly-Si TFTs than does rapid thermal annealing. In addition, MWA can fabricate nanoscale devices. Poly-Si TFTs with short channel annealed by microwave reveals better high-frequency performance and switching characteristics.
引用
收藏
页码：345 / 347
页数：3
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