A New Model of Low-Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

被引：0
|
作者：
Wang, Ming [1 ]
Wang, Mingxiang [1 ]
机构：
[1] Soochow Univ, Dept Microelect, Suzhou 215006, Peoples R China
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年
关键词：
1/f noise; intra-grain traps; poly-Si TFTs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An new model for the 1/f noise of polycrystalline Silicon thin-film transistors (poly-Si TFTs) is proposed. The model attributes the 1/f noise to carrier number fluctuation and grain boundary (GB) barrier fluctuation, which both caused by carrier trapping/detrapping between the channel inversion carriers and the intra-grain traps within the GB depletion region for poly-Si TFTs. The model fits the noise data very well in the low drain current region, clarifying the origin of 1/f noise in this region.
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页数：2
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