Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors

被引：5
|
作者：
Tassis, DH
Hastas, NA
Dialitriadis, CA [1 ]
Kamarinos, G
机构：
[1] Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece
[2] ENSERG, IMEP, F-38016 Grenoble 1, France
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 03期
关键词：
polysilicon; TFTs; noise;
D O I：
10.1016/j.sse.2004.11.023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved analysis of the low frequency noise in polycrystalline silicon thin-film transistors (polysilicon TFTs) is presented. The analysis takes into account an exponential energy distribution for the density of states and the flat-band voltage fluctuations for the origin of the drain current noise. Analysis of the drain current spectral density enables the characterization of the gate oxide/polysilicon interface and the active polysilicon layer quality. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：513 / 515
页数：3
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