Demonstration of near-ideal Schottky contacts to Si-doped AlN

被引：7

作者：

Quinones, C. E. ^{[1
]}

Khachariya, D. ^{[2
]}

Bagheri, P. ^{[1
]}

Reddy, P. ^{[2
]}

Mita, S. ^{[2
]}

Kirste, R. ^{[2
]}

Rathkanthiwar, S. ^{[1
]}

Tweedie, J. ^{[2
]}

Pavlidis, S. ^{[3
]}

Kohn, E. ^{[1
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA

[2] Adroit Mat, Cary, NC 27518 USA

[3] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 17期

关键词：

SEEDED GROWTH; CRYSTALS;

D O I：

10.1063/5.0174524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I-V measurements. An activation energy of similar to 300 meV was observed in the series resistance, which corresponded to the ionization energy of the deep Si donor state. Both Ohmic and Schottky contacts were stable up to 650 degrees C, with around four orders of magnitude rectification at this elevated temperature. These results demonstrate the potential of AlN as a platform for power devices capable of operating in extreme environments.

引用

页数：6

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