Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

被引：0

作者：

Guillot, F. ^{[1
]}

Bellet-Amalric, E. ^{[1
]}

Monroy, E. ^{[1
]}

Tchernycheva, M. ^{[2
]}

Nevou, L. ^{[2
]}

Doyennette, L. ^{[2
]}

Julien, F.H. ^{[2
]}

Dang, Le Si ^{[3
]}

Remmele, T. ^{[4
]}

Albrecht, M. ^{[4
]}

Shibata, T. ^{[5
]}

Tanaka, M. ^{[5
]}

机构：

[1] Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

[2] Action OptoGaN, Institut d'Electronique Fondamentale, UMR 8622 CNRS, 91405 Orsay Cedex, France

[3] Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, Laboratoire de Spectrométrie Physique (CNRS UMR 5588), Université Joseph Fourier, 38402 Saint Martin d'Hères, France

[4] Institut für Kristallzüchtung, Max-Born-Strasse 2, D-12489 Berlin, Germany

[5] NGK Insulators, Ltd., 2-54 Sudacho, Mizuhoku, Nagoya, Japan

来源：

Journal of Applied Physics | 2006年 / 100卷 / 04期

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摘要：

Journal article (JA)

引用

共 50 条

[1] Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Guillot, F.
Tchernycheva, M.
Nevou, L.
Doyennette, L.
Monroy, E.
Julien, F. H.
Dang, Le Si
Remmele, T.
Albrecht, M.
Shibata, T.
Tanaka, M.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07): : 1754 - 1758
[2] Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Guillot, F.
Bellet-Amalric, E.
Monroy, E.
Tchernycheva, M.
Nevou, L.
Doyennette, L.
Julien, F. H.
Dang, Le Si
Remmele, T.
Albrecht, M.
Shibata, T.
Tanaka, M.
JOURNAL OF APPLIED PHYSICS, 2006, 100 (04)
[3] Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths
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