Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

被引：0

作者：

Guillot, F. ^{[1
]}

Bellet-Amalric, E. ^{[1
]}

Monroy, E. ^{[1
]}

Tchernycheva, M. ^{[2
]}

Nevou, L. ^{[2
]}

Doyennette, L. ^{[2
]}

Julien, F.H. ^{[2
]}

Dang, Le Si ^{[3
]}

Remmele, T. ^{[4
]}

Albrecht, M. ^{[4
]}

Shibata, T. ^{[5
]}

Tanaka, M. ^{[5
]}

机构：

[1] Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

[2] Action OptoGaN, Institut d'Electronique Fondamentale, UMR 8622 CNRS, 91405 Orsay Cedex, France

[3] Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, Laboratoire de Spectrométrie Physique (CNRS UMR 5588), Université Joseph Fourier, 38402 Saint Martin d'Hères, France

[4] Institut für Kristallzüchtung, Max-Born-Strasse 2, D-12489 Berlin, Germany

[5] NGK Insulators, Ltd., 2-54 Sudacho, Mizuhoku, Nagoya, Japan

来源：

Journal of Applied Physics | 2006年 / 100卷 / 04期

关键词：

D O I：

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摘要：

Journal article (JA)

引用

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