High conductivity in Si-doped GaN wires

被引：33

作者：

Tchoulfian, P. ^{[1
,2
,3
]}

Donatini, F. ^{[2
,3
]}

Levy, F. ^{[1
]}

Amstatt, B. ^{[1
]}

Ferret, P. ^{[1
]}

Pernot, J. ^{[2
,3
,4
]}

机构：

[1] CEA LETI, F-38054 Grenoble 9, France

[2] CNRS, Inst Neel, F-38042 Grenoble 9, France

[3] Univ Grenoble 1, F-38042 Grenoble 9, France

[4] Inst Univ France, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 12期

关键词：

CHEMICAL-VAPOR-DEPOSITION; PHASE EPITAXY; NANOWIRES; LAYERS; PHOTOLUMINESCENCE; RESISTANCE; CONTACTS; GALLIUM; SURFACE; GROWTH;

D O I：

10.1063/1.4799167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent resistivity measurements have been performed on single Si-doped GaN microwires grown by catalyst-free metal-organic vapour phase epitaxy. Metal-like conduction is observed from four-probe measurements without any temperature dependence between 10K and 300 K. Radius-dependent resistivity measurements yield resistivity values as low as 0.37 m Omega cm. This is in agreement with the full width at half maximum (170 meV) of the near band edge luminescence obtained from low temperature cathodoluminescence study. Higher dopant incorporation during wire growth as compared to conventional epitaxial planar case is suggested to be responsible for the unique conductivity. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799167]

引用

页数：4

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