Demonstration of near-ideal Schottky contacts to Si-doped AlN

被引：7

作者：

Quinones, C. E. ^{[1
]}

Khachariya, D. ^{[2
]}

Bagheri, P. ^{[1
]}

Reddy, P. ^{[2
]}

Mita, S. ^{[2
]}

Kirste, R. ^{[2
]}

Rathkanthiwar, S. ^{[1
]}

Tweedie, J. ^{[2
]}

Pavlidis, S. ^{[3
]}

Kohn, E. ^{[1
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA

[2] Adroit Mat, Cary, NC 27518 USA

[3] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 17期

关键词：

SEEDED GROWTH; CRYSTALS;

D O I：

10.1063/5.0174524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I-V measurements. An activation energy of similar to 300 meV was observed in the series resistance, which corresponded to the ionization energy of the deep Si donor state. Both Ohmic and Schottky contacts were stable up to 650 degrees C, with around four orders of magnitude rectification at this elevated temperature. These results demonstrate the potential of AlN as a platform for power devices capable of operating in extreme environments.

引用

页数：6

共 50 条

[21] Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact
Chen, Z. T.
Fujita, K.
Ichikawa, J.
Egawa, T.
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) : 620 - 622
[22] Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN
Liu, Y
Egawa, T
Jiang, H
Zhang, B
Ishikawa, H
Hao, M
APPLIED PHYSICS LETTERS, 2004, 85 (24) : 6030 - 6032
[23] Microscopic origin of n-type behavior in Si-doped AlN
Hevia, Daniel Fernandez
Stampfl, Catherine
Vines, Francesc
Illas, Francesc
PHYSICAL REVIEW B, 2013, 88 (08):
[24] Probing the relationship between structural and optical properties of Si-doped AlN
Pantha, B. N.
Sedhain, A.
Li, J.
Lin, J. Y.
Jiang, H. X.
APPLIED PHYSICS LETTERS, 2010, 96 (13)
[25] Near ideal, high barrier, Au-nGaN Schottky contacts
Maffeis, TGG
Simmonds, MC
Clark, SA
Peiro, F
Haines, P
Parbrook, PJ
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (20) : L115 - L118
[26] Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
Purlu, Kagan Murat
Kocak, Merve Nur
Yolcu, Gamze
Perkitel, Izel
Altuntas, Ismail
Demir, Ilkay
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 142
[27] Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage
Liu, Wenjian
Sayed, Islam
Romanczyk, Brian
Hatui, Nimpam
Georgieva, Jana
Li, Haoran
Keller, Stacia
Mishra, Umesh K.
2020 DEVICE RESEARCH CONFERENCE (DRC), 2020,
[28] Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes
Hudait, MK
Krupanidhi, SB
SOLID-STATE ELECTRONICS, 1999, 43 (12) : 2135 - 2139
[29] Near-field photoluminescence of Si-doped GaAs
Eah, SK
Jhe, WH
Saiki, T
Ohtsu, M
OPTICAL REVIEW, 1996, 3 (6B) : 450 - 453
[30] AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES
REITH, TM
APPLIED PHYSICS LETTERS, 1976, 28 (03) : 152 - 154

← 1 2 3 4 5 →