AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES

被引：12
|
作者：
REITH, TM [1 ]
机构：
[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
来源：
APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期
关键词：
D O I：
10.1063/1.88677
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：152 / 154
页数：3
相关论文
共 50 条
  • [1] HOLE-TRAPPING EFFECTS IN REVERSE-BIASED SI-DOPED AL SCHOTTKY-BARRIER DIODES
    SULLIVAN, MJ
    REITH, TM
    AVRON, M
    SHATZKES, M
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3574 - 3577
  • [2] EFFECTS OF HYDROGEN ON AL/P-SI SCHOTTKY-BARRIER DIODES
    JIA, YQ
    QIN, GG
    APPLIED PHYSICS LETTERS, 1990, 56 (07) : 641 - 643
  • [3] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES
    BASTERFIELD, J
    SHANNON, JM
    GILL, A
    SOLID-STATE ELECTRONICS, 1975, 18 (03) : 290 - &
  • [4] SCHOTTKY-BARRIER DIODES
    ADAMS, AR
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (10): : 958 - &
  • [5] GRADED INGAP SCHOTTKY DIODES ON SI-DOPED INP
    PAN, N
    CARTER, J
    JACKSON, GS
    LEE, D
    HEIN, S
    HAASE, MA
    WU, CH
    HSIEH, KC
    APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1839 - 1841
  • [6] EFFECTS OF HYDROGEN ON ER/P-TYPE SI SCHOTTKY-BARRIER DIODES
    WANG, ZM
    ZHANG, YX
    WU, K
    YUAN, MH
    CHEN, WX
    QIN, GG
    PHYSICAL REVIEW B, 1995, 51 (12) : 7878 - 7881
  • [7] Effects of hydrogen on Er/p-type Si Schottky-barrier diodes
    1600, (24):
  • [8] BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT
    CHINO, K
    SOLID-STATE ELECTRONICS, 1973, 16 (01) : 119 - &
  • [9] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
    EGLASH, SJ
    NEWMAN, N
    PAN, S
    MO, D
    SHENAI, K
    SPICER, WE
    PONCE, FA
    COLLINS, DM
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
  • [10] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES
    COE, DJ
    RHODERICK, EH
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) : 965 - 972
12345