AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES

被引：12

作者：

REITH, TM ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期

关键词：

D O I：

10.1063/1.88677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：152 / 154

页数：3

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