Rowhammer Attacks in Dynamic Random-Access Memory and Defense Methods

被引:0
|
作者
Kim, Dayeon [1 ]
Park, Hyungdong [1 ]
Yeo, Inguk [1 ]
Lee, Youn Kyu [1 ]
Kim, Youngmin [2 ]
Lee, Hyung-Min [3 ]
Kwon, Kon-Woo [1 ]
机构
[1] Hongik Univ, Dept Comp Engn, Seoul 04066, South Korea
[2] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea
[3] Korea Univ, Sch Elect Engn, Seoul, 02841, South Korea
关键词
dynamic random-access memory; rowhammer; security; vulnerability; DRAM; MITIGATION;
D O I
10.3390/s24020592
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper provides a comprehensive overview of the security vulnerability known as rowhammer in Dynamic Random-Access Memory (DRAM). While DRAM offers many desirable advantages, including low latency, high density, and cost-effectiveness, rowhammer vulnerability, first identified in 2014, poses a significant threat to computing systems. Rowhammer attacks involve repetitive access to specific DRAM rows, which can cause bit flips in neighboring rows, potentially compromising system credentials, integrity, and availability. The paper discusses the various stages of rowhammer attacks, explores existing attack techniques, and examines defense strategies. It also emphasizes the importance of understanding DRAM organization and the associated security challenges.
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页数:20
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