Chirality-induced spin splitting in 1D InSeI

被引:8
|
作者
Zhao, Shu [1 ,2 ,3 ]
Hu, Jiaming [2 ,3 ]
Zhu, Ziye [2 ,3 ]
Yao, Xiaoping [2 ,3 ]
Li, Wenbin [2 ,3 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[2] Westlake Univ, Sch Engn, Key Lab 3D Micro Nano Fabricat & Characterizat Zh, Hangzhou 310030, Peoples R China
[3] Westlake Inst Adv Study, Inst Adv Technol, Hangzhou 310024, Peoples R China
关键词
PREDICTION;
D O I
10.1063/5.0164202
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin-orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculations to investigate the electronic states of chiral one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite spin states exist in the left- and right-handed 1D InSeI with significant spin splitting and spin-momentum collinear locking. Although the spin states at the conduction band minimum (CBM) and valence band maximum of 1D InSeI are both nearly degenerate, a direct-to-indirect bandgap transition occurs when a moderate tensile strain (similar to 4%) is applied along the 1D chain direction, leading to a sizable spin splitting (similar to 0.11 eV) at the CBM. These findings indicate that 1D InSeI is a promising material for chiral spintronics.
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页数:5
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