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Chirality-induced spin splitting in 1D InSeI
被引:8
|作者:
Zhao, Shu
[1
,2
,3
]
Hu, Jiaming
[2
,3
]
Zhu, Ziye
[2
,3
]
Yao, Xiaoping
[2
,3
]
Li, Wenbin
[2
,3
]
机构:
[1] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[2] Westlake Univ, Sch Engn, Key Lab 3D Micro Nano Fabricat & Characterizat Zh, Hangzhou 310030, Peoples R China
[3] Westlake Inst Adv Study, Inst Adv Technol, Hangzhou 310024, Peoples R China
关键词:
PREDICTION;
D O I:
10.1063/5.0164202
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Spin-orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculations to investigate the electronic states of chiral one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite spin states exist in the left- and right-handed 1D InSeI with significant spin splitting and spin-momentum collinear locking. Although the spin states at the conduction band minimum (CBM) and valence band maximum of 1D InSeI are both nearly degenerate, a direct-to-indirect bandgap transition occurs when a moderate tensile strain (similar to 4%) is applied along the 1D chain direction, leading to a sizable spin splitting (similar to 0.11 eV) at the CBM. These findings indicate that 1D InSeI is a promising material for chiral spintronics.
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页数:5
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