A High Frequency MOS-Based Floating Charge-Controlled Memcapacitor Emulator

被引：6
|
作者：
Ananda, Y. R. [1 ]
Satyanarayan, Gadipelli Sriharsha [1 ]
Trivedi, Gaurav [1 ]
机构：
[1] Indian Inst Technol Guwahati, Dept Elect & Elect Engn, Gauhati 781039, India
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2023年 / 70卷 / 03期
关键词：
Memcapacitor; emulator; VDTA; OTA; floating type; MEMRISTOR; ELEMENTS; DESIGN; CIRCUIT;
D O I：
10.1109/TCSII.2022.3221334
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, a MOS-based memcapacitor emulator operating at 1.2 MHz is proposed. The analytical model of the proposed emulator is verified numerically and experimentally. Numerical analysis of the proposed memcapacitor with respect to various parameters is performed using Cadence Virtuoso with TSMC 180 nm PDKs followed by post-layout simulation, which also validates its correctness. Its area utilization and power consumption are 2077.85 mu m(2) and 2.726 mW, respectively. Its operating frequency is 1.71x higher than its nearest contempo-rary memcapacitor. Physical experiments are conducted utilizing CA3080 to establish the correctness of the proposed emulator.
引用
收藏
页码：1189 / 1193
页数：5
相关论文
共 50 条
  • [31] Zero-Power, High-Frequency Floating Memristor Emulator Circuit and Its Applications
    Barraj, Imen
    Neifar, Amel
    Mestiri, Hassen
    Masmoudi, Mohamed
    MICROMACHINES, 2025, 16 (03)
  • [32] Charge-Controlled GaN FET Modeling by Displacement Current Integration From Frequency-Domain NVNA Measurements
    Niessen, Daniel
    Gibiino, Gian Piero
    Cignani, Rafael
    Santarelli, Alberto
    Schreurs, Dominique M. M. -P.
    Filicori, Fabio
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (12) : 4382 - 4393
  • [33] A new electronically controlled floating/grounded meminductor emulator based on single MO-VDTA
    Predrag B. Petrović
    Analog Integrated Circuits and Signal Processing, 2022, 110 : 185 - 195
  • [34] Floating incremental/decremental flux-controlled memristor emulator circuit based on single VDTA
    Predrag B. Petrović
    Analog Integrated Circuits and Signal Processing, 2018, 96 : 417 - 433
  • [35] A new electronically controlled floating/grounded meminductor emulator based on single MO-VDTA
    Petrovic, Predrag B.
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2022, 110 (01) : 185 - 195
  • [36] Floating incremental/decremental flux-controlled memristor emulator circuit based on single VDTA
    Petrovic, Predrag B.
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2018, 96 (03) : 417 - 433
  • [37] Ultrasensitive UV Photodetector Based on Interfacial Charge-Controlled Inorganic Perovskite-Polymer Hybrid Structure
    Shao, Dali
    Zhu, Weiguang
    Liu, Xueqing
    Li, Mingxin
    Chen, Jie
    Sun, Yi-Yang
    Xin, Guoqing
    Lian, Jie
    Sawyer, Shayla
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (38) : 43106 - 43114
  • [38] INVERSION CHARGE REDISTRIBUTION MODEL OF HIGH-FREQUENCY MOS CAPACITANCE
    BERMAN, A
    KERR, DR
    SOLID-STATE ELECTRONICS, 1974, 17 (07) : 735 - 742
  • [39] High-voltage p-channel level shifter using charge-controlled self-isolation structure
    Yamazaki, Tomoyuki
    Kumagai, Naoki
    Nishiura, Akira
    Fujihira, Tatsuhiko
    Seki, Yasukazu
    Matsumoto, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 6914 - 6916
  • [40] High-voltage p-channel level shifter using charge-controlled self-isolation structure
    Yamazaki, Tomoyuki
    Kumagai, Naoki
    Nishiura, Akira
    Fujihira, Tatsuhiko
    Seki, Yasukazu
    Matsumoto, Takashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 6914 - 6916
12345