A High Frequency MOS-Based Floating Charge-Controlled Memcapacitor Emulator

被引：6

作者：

Ananda, Y. R. ^{[1
]}

Satyanarayan, Gadipelli Sriharsha ^{[1
]}

Trivedi, Gaurav ^{[1
]}

机构：

[1] Indian Inst Technol Guwahati, Dept Elect & Elect Engn, Gauhati 781039, India

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2023年 / 70卷 / 03期

关键词：

Memcapacitor; emulator; VDTA; OTA; floating type; MEMRISTOR; ELEMENTS; DESIGN; CIRCUIT;

D O I：

10.1109/TCSII.2022.3221334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, a MOS-based memcapacitor emulator operating at 1.2 MHz is proposed. The analytical model of the proposed emulator is verified numerically and experimentally. Numerical analysis of the proposed memcapacitor with respect to various parameters is performed using Cadence Virtuoso with TSMC 180 nm PDKs followed by post-layout simulation, which also validates its correctness. Its area utilization and power consumption are 2077.85 mu m(2) and 2.726 mW, respectively. Its operating frequency is 1.71x higher than its nearest contempo-rary memcapacitor. Physical experiments are conducted utilizing CA3080 to establish the correctness of the proposed emulator.

引用

页码：1189 / 1193

页数：5

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