Noise Distortion Analysis of the Designed Heterodielectric Dual-Material Gate Dopingless Nanowire FET

The dopingless nanowire (NW) field-effect transistor (FET) has been discovered as a remedy to low drive current problems of junctionless NWFET. To complete the state-of-the-art devices, an improved technique is needed for enhancing the performance of dopingless NWFET. One such structure with improved characteristics of dopingless NWFET is proposed in this paper and termed a dual-material heterodielectric dopingless NWFET (DM-HDNWFET). We demonstrate the performance improvement of the proposed DM-HDNWFET by comparing its results with those of conventional dual-material gate NWFET. Performance improvements, in terms of drive current, transconductance, and transconductance gain factor, are observed for the proposed structure. By incorporating dual-material at the gate and heterodielectric as oxide, this structure paves the way for further enhancing the capabilities of conventional dopingless configurations. The optimization of the proposed structure is also carried out in this study along with in-depth noise analysis. The noise analysis for the proposed structure is carried out by studying parameters like the noise figure (NF), real impedance (Z(0)), auto-correlation function (ACF), and cross-correlation function, and evaluating their behavior towards variation in the lengths of the high-k dielectric, gate 1, and gate 2. The noise analysis shows the capability of this structure to be used efficiently in communication applications.