Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

被引：6
|
作者：
Zhang, Zhaohao [1 ,2 ]
Zhang, Fan [1 ,2 ]
Zhang, Yadong [1 ,2 ]
Xu, Gaobo [1 ,2 ]
Wu, Zhenhua [1 ,2 ]
Zhang, Qingzhu [1 ,2 ]
Li, Yongliang [1 ,2 ]
Yin, Huaxiang [1 ,2 ]
Luo, Jun [1 ,2 ]
Wang, Wenwu [1 ,2 ]
Ye, Tianchun [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Non-volatile memory; ambipolar; ferroelectric diode; content-addressable storage; SEARCH; DESIGN; CELL; TCAM;
D O I：
10.1109/LED.2022.3223335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this Letter, for the first time, one-memristor (1M)-based ternary-content-addressable memory (TCAM) with an ultradense 4F(2) cell area is proposed on a single reconfigurable TiN/hafnium zirconium oxide (HZO)/indium gallium zinc oxide (IGZO)/TiN ferroelectric (FE) diode. By modulating the FE-polarization-controlled Schottky junction that exists at the interface, reconfigured P-N, N-P, and ohmic like junctions of the FE diodes were designed for '0', '1', and 'X' storage states in the TCAM cell, respectively. In addition to non-volatile FE polarization for data storage, ambipolar-like behavior induced by the symmetrical junction characteristics was obtained on the diodes for searching queries. Using both non-volatile and ambipolar-like characteristics, typical TCAM functions with a maximum driving on/off ratio of similar to 500 were confirmed experimentally on a single FE diode, indicating the great potential of this memory device in area-efficient artificial intelligence processors.
引用
收藏
页码：64 / 67
页数：4
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