Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

被引：6

作者：

Zhang, Zhaohao ^{[1
,2
]}

Zhang, Fan ^{[1
,2
]}

Zhang, Yadong ^{[1
,2
]}

Xu, Gaobo ^{[1
,2
]}

Wu, Zhenhua ^{[1
,2
]}

Zhang, Qingzhu ^{[1
,2
]}

Li, Yongliang ^{[1
,2
]}

Yin, Huaxiang ^{[1
,2
]}

Luo, Jun ^{[1
,2
]}

Wang, Wenwu ^{[1
,2
]}

Ye, Tianchun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Non-volatile memory; ambipolar; ferroelectric diode; content-addressable storage; SEARCH; DESIGN; CELL; TCAM;

D O I：

10.1109/LED.2022.3223335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this Letter, for the first time, one-memristor (1M)-based ternary-content-addressable memory (TCAM) with an ultradense 4F(2) cell area is proposed on a single reconfigurable TiN/hafnium zirconium oxide (HZO)/indium gallium zinc oxide (IGZO)/TiN ferroelectric (FE) diode. By modulating the FE-polarization-controlled Schottky junction that exists at the interface, reconfigured P-N, N-P, and ohmic like junctions of the FE diodes were designed for '0', '1', and 'X' storage states in the TCAM cell, respectively. In addition to non-volatile FE polarization for data storage, ambipolar-like behavior induced by the symmetrical junction characteristics was obtained on the diodes for searching queries. Using both non-volatile and ambipolar-like characteristics, typical TCAM functions with a maximum driving on/off ratio of similar to 500 were confirmed experimentally on a single FE diode, indicating the great potential of this memory device in area-efficient artificial intelligence processors.

引用

页码：64 / 67

页数：4

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