Gate All around CNTFET based Ternary Content Addressable Memory

被引：2

作者：

Ganie, Sabzar Shafi ^{[1
]}

Singh, Amandeep ^{[1
]}

机构：

[1] Natl Inst Technol, Srinagar, J&K, India

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2022年 / 11卷 / 06期

关键词：

CARBON; PERFORMANCE; DESIGN; CMOS; CELL;

D O I：

10.1149/2162-8777/ac77bc

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper proposes a design of gate all around CNTFET based ternary content addressable memory (TCAM). TCAM cell is designed and simulated in HSPICE using top gated CNTFET (TG-CNTFET) & gate all around CNTTFET (GAA-CNTFET). Dual chirality technique is used to design TCAM cell i.e. different chirality for n-type CNTFET & p-type CNTFET which utilizes different threshold voltages and hence improve the performance. Comparative analysis has been done for various parameters viz. Static noise margin (SNM), delay, power and power delay product (PDP). It has been found that GAA-CNTFET based TCAM gives better SNM and power as compared to TG-CNTFET based TCAM, however TG-CNTFET based TCAM gives less delay. However overall PDP is less in GAA-CNTFET which make is suitable for circuit applications as compared to TG-CNTFET.

引用

页数：7

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