Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node

In this work, a novel stacked nanosheetreconfigurable field effect transistor with extendedsource/drain (ESD-NSRFET) is proposed to improve ON-current (I-ON), where an additional extended source/drainis intersected between the vertically stacked nanosheets.Compared to the conventional nanosheet RFET (NSRFET),I-ON of proposed ESD-NSRFET with 4 nm extended sourceis demonstrated to improve by 176x and 80xfor n-type andp-type program, respectively. Geometry parameters likeextended source/drain length L-ESD, nanosheet widthWNS,and nanosheet thickness T-NS are investigated in point of I-ON. Considering the trade-off between increased tunnelingstrength and degraded parasitic source resistance, LESD in ESD-NSRFET should be carefully designed to obtainoptimal current. The underlying physical mechanism isalso discussed in detail.