Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node

被引：1

作者：

Ye, Hongbo ^{[1
]}

Hu, Junfeng ^{[2
]}

Liu, Ziyu ^{[3
]}

Wang, Chao ^{[2
]}

Li, Xiaojin ^{[2
]}

Shi, Yanling ^{[2
]}

Mao, Zhigang ^{[1
]}

Sun, Yabin ^{[2
,4
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai 200240, Peoples R China

[2] East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China

[3] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

[4] East China Normal Univ, Chongqing Key Lab Precis Opt, Chongqing Inst, Chongqing 401120, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Tunneling; Silicon; Silicides; Nickel alloys; Logic gates; Electrostatic discharges; Electrons; Extended source/drain; line tunneling; reconfigurable field-effect transistor (RFET); FIELD-EFFECT TRANSISTOR; NICKEL-SILICIDE; PERFORMANCE; NANOWIRES; IMPACT; MOSFET; LAYER; TFET; GE; SI;

D O I：

10.1109/TED.2024.3359581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a novel stacked nanosheetreconfigurable field effect transistor with extendedsource/drain (ESD-NSRFET) is proposed to improve ON-current (I-ON), where an additional extended source/drainis intersected between the vertically stacked nanosheets.Compared to the conventional nanosheet RFET (NSRFET),I-ON of proposed ESD-NSRFET with 4 nm extended sourceis demonstrated to improve by 176x and 80xfor n-type andp-type program, respectively. Geometry parameters likeextended source/drain length L-ESD, nanosheet widthWNS,and nanosheet thickness T-NS are investigated in point of I-ON. Considering the trade-off between increased tunnelingstrength and degraded parasitic source resistance, LESD in ESD-NSRFET should be carefully designed to obtainoptimal current. The underlying physical mechanism isalso discussed in detail.

引用

页码：2265 / 2270

页数：6

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