A novel nanosheet reconfigurable field effect transistor with dual-doped source/drain

被引：2

作者：

Lu, Bin ^{[1
]}

Liu, Xiaotao ^{[1
]}

Li, Zhu ^{[1
]}

Di, Jiayu ^{[1
]}

Wang, Dawei ^{[1
]}

Chen, Yulei ^{[1
]}

Dong, Linpeng ^{[2
]}

Miao, Yuanhao ^{[3
]}

机构：

[1] Shanxi Normal Univ, Sch Phys & Informat Engn, Taiyuan 030000, Peoples R China

[2] Xian Technol Univ, Shaanxi Prov Key Lab Thin Films Technol & Opt Test, Xian 710032, Peoples R China

[3] Res & Dev Ctr Optoelect Hybrid IC, Guangdong Greater Bay Area, Inst Integrated Circuit & Syst, Shanghai 510535, Guangdong, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2024年 / 147卷

基金：

中国国家自然科学基金;

关键词：

Dual -doped source/drain; RFET; MOSFET; TFET; Schottky barrier; MODULATION; DESIGN;

D O I：

10.1016/j.mejo.2024.106178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

-In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet architecture and triple independent gates is proposed and studied with the numerical simulations. The proposed RFET can behave as either an n/p-type MOSFET or an n/p-type tunneling-FET (TFET) according to different program biases. A comprehensive study is carried out on the device mechanism and the influence of key device parameters. Various metrics, such as the on-state current (ION), off-state current (IOFF), ION/IOFF, threshold voltage (VT) and subthreshold swing (SS), are used to evaluate the proposed RFET. This RFET combining the advantages of the conventional MOSFETs (High ION and operation speed) and the new emerging TFETs (Low IOFF, sub-threshold swing and power dissipation) could make the circuit design more flexible and high efficiency, and improve the circuit performance.

引用

页数：7

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