Cryogenic Characterization of 40nm CMOS for Quantum Control Applications

被引：0

作者：

Mani, Aarthy ^{[1
]}

Leong, Victor ^{[2
]}

Anh Tuan Do ^{[1
]}

机构：

[1] ASTAR, IME, Singapore, Singapore

[2] ASTAR, IMRE, Singapore, Singapore

来源：

2023 20TH INTERNATIONAL SOC DESIGN CONFERENCE, ISOCC | 2023年

基金：

新加坡国家研究基金会;

关键词：

Cryogenic CMOS; quantum control & read-out;

D O I：

10.1109/ISOCC59558.2023.10396083

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

CMOS circuits operating at cryogenic temperatures are gaining momentum as a promising approach for scaling up future quantum processors. However, standard SPICE models provided by the foundries do not accurately capture device behavior in cryogenic environments, thus hindering circuit design and optimization. Rigorous cryogenic characterization of CMOS devicesis required to capture their performance shift at very low temperatures. This work reports our 40nm CMOS transistor test chip and its preliminary characterization at 8 K. This serves as an important step towards developing efficient cyrogenic CMOS chip for quantum control applications.

引用

页码：3 / 4

页数：2

共 50 条

[21] A Fully Integrated Multi-Mode High-Efficiency Transmitter for IoT Applications in 40nm CMOS
Sharifzadeh, Mojtaba
Masnadi-Shirazi, Amir Hossein
Rajavi, Yashar
Lavasani, Hossein Miri
Taghivand, Mazhareddin
2018 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2018,
[22] Inductor Modeling with Layout-Dependent Effects in 40nm CMOS Process
Lourandakis, Errikos
Nikellis, Konstantinos
Stefanou, Stefanos
Bantas, Sotiris
2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2012, : 81 - 84
[23] A Programmable 0.7-to-2.7GHz Direct ΔΣ Receiver in 40nm CMOS
Englund, Mikko
Ostman, Kim B.
Viitala, Olli
Kaltiokallio, Mikko
Stadius, Kari
Koli, Kimmo
Ryynanen, Jussi
2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 470 - +
[24] A Digitally Modulated 60GHz Polar Transmitter in 40nm CMOS
Khalaf, K.
Vidojkovic, V.
Vaesen, K.
Long, J. R.
Van Thillo, W.
Wambacq, P.
2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 159 - 162
[25] A High-Linear Digital-to-Phase Converter in 40nm CMOS
Ji, Yu
Ding, Li
Jin, Jing
2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
[26] A Novel High Performance Medium -Voltage DEnMOS in 40nm CMOS Technology
Wei, Lin
Singh, Upinder
Koo, Jeoung Mo
Jiang Huihua
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 292 - 294
[27] A Temperature-Compensated Power-on-Reset Circuit in 40nm CMOS
Lin, Yanfei
Xu, Ken
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
[28] Highly Accurate Product-Level Aging Monitoring in 40nm CMOS
Hofmann, K.
Reisinger, H.
Ermisch, K.
Schluender, C.
Gustin, W.
Pompl, T.
Georgakos, G.
von Arnim, K.
Hatsch, J.
Kodytek, T.
Baumann, T.
Pacha, C.
2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, : 27 - 28
[29] The Core Chip Design of Inter-Integrated Circuit in 40nm CMOS
Wan, Shisong
Tang, Lu
Shen, Xuan
2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 124 - 127
[30] A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
Beikmirza, Mohammadreza
Shen, Yiyu
De Vreede, Leo C. N.
Alavi, Morteza S.
2022 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS 2022), 2022, : 975 - 978

← 1 2 3 4 5 →