Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

被引：1

作者：

Liu, Min ^{[1
,2
]}

Cai, Ziteng ^{[1
,3
]}

Liu, Jian ^{[1
,2
]}

Wu, Nanjian ^{[1
,2
]}

Liu, Liyuan ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2023年 / 44卷 / 10期

基金：

中国国家自然科学基金;

关键词：

power detectors; quantum cascade laser (QCL); CMOS image sensor (CIS); terahertz; QUANTUM CASCADE LASER; TERAHERTZ RADIATION; WAVE; DETECTOR; TRANSISTOR; ARRAY;

D O I：

10.1088/1674-4926/44/10/102401

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 x 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 x 5.39 mm(2) and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.

引用

页数：8

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